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Freescale Semiconductor Technical Data
Document Number: MRF8S9220H Rev. 0, 11/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 65 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.7 19.8 19.4 hD (%) 35.1 35.3 35.7 Output PAR (dB) 6.1 6.2 6.1 ACPR (dBc) - 37.4 - 37.5 - 37.4
MRF8S9220HR3 MRF8S9220HSR3
920 - 960 MHz, 65 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 317 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness * Typical Pout @ 1 dB Compression Point ] 220 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * Optimized for Doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2)
CASE 465 - 06, STYLE 1 NI - 780 MRF8S9220HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF8S9220HSR3
Symbol VDSS VGS VDD Tstg TC TJ
Value - 0.5, +70 - 6.0, +10 32, +0 - 65 to +150 150 225
Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 81`C, 65 W CW, 28 Vdc, IDQ = 1600 mA Case Temperature 81C, 220 W CW, 28 Vdc, IDQ = 1600 mA Symbol RJC Value (2,3) 0.39 0.32 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2009. All rights reserved.
MRF8S9220HR3 MRF8S9220HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 4 Adc) VGS(th) VGS(Q) VDS(on) 1.5 2.3 0.1 2.2 3.1 0.2 3 3.8 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 65 W Avg., f = 960 MHz, Single- Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 18.0 34.0 5.7 -- -- 19.4 35.7 6.1 - 37.4 - 13 21.0 -- -- - 35 -8 dB % dB dBc dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 65 W Avg., Single- Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 920 MHz 940 MHz 960 MHz 1. Part internally matched both on input and output. Gps (dB) 19.7 19.8 19.4 hD (%) 35.1 35.3 35.7 Output PAR (dB) 6.1 6.2 6.1 ACPR (dB) - 37.4 - 37.5 - 37.4 IRL (dB) - 13 - 24 - 13 (continued)
MRF8S9220HR3 MRF8S9220HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 200 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 40 MHz Bandwidth @ Pout = 65 W Avg. Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol P1dB IMDsym Min -- -- Typ 220 12 Max -- -- Unit W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, 920 - 960 MHz Bandwidth
VBWres GF G P1dB
-- -- -- --
40 0.3 0.017 0.016
-- -- -- --
MHz dB dB/C dBm/C
MRF8S9220HR3 MRF8S9220HSR3 RF Device Data Freescale Semiconductor 3
C30 R2
R3
C9 C10
C26 C28 C8 C22* C24*
C7 C1
R1
C20
C16 C18 C11 C14 C17 C13 C12
C2
C3
C4 C5
CUT OUT AREA
C19
C15
C6 MRF8S9XXXH Rev. 1
C21* C23*
C25 C27
C29 *C21, C22, C23, and C24 are mounted vertically.
Figure 1. MRF8S9220HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S9220HR3(HSR3) Test Circuit Component Designations and Values
Part C1, C8, C11, C23, C24 C2 C3, C12 C4, C14 C5 C6, C7, C21, C22 C9 C10 C13 C15, C16 C17 C18 C19, C20 C25, C26, C27, C28 C29, C30 R1 R2 R3 PCB Description 39 pF Chip Capacitors 0.3 pF Chip Capacitor 1.0 pF Chip Capacitors 1.2 pF Chip Capacitors 0.7 pF Chip Capacitor 10 pF Chip Capacitors 2.2 F, 50 V Chip Capacitor 47 F, 50 V Electrolytic Capacitor 1.3 pF Chip Capacitor 5.1 pF Chip Capacitors 5.6 pF Chip Capacitor 6.2 pF Chip Capacitor 6.8 pF Chip Capacitors 10 F, 50 V Chip Capacitors 470 F, 63 V Electrolytic Capacitors 0 , 3 A Chip Resistor 3.3 , 1/2 W Chip Resistor 2.2 k, 1/4 W Chip Resistor 0.030, r = 3.5 Part Number ATC100B390JT500XT ATC100B0R3BT500XT ATC100B1R0BT500XT ATC100B1R2BT500XT ATC100B0R7BT500XT ATC100B100JT500XT C1825C225J5RAC- TU 476KXM050M ATC100B1R3BT500XT ATC100B5R1CT500XT ATC100B5R6CT500XT ATC100B6R2BT500XT ATC100B6R8CT500XT GRM55DR61H106KA88L MCGPR63V477M13X26- RH CRCW12060000Z0EA P3.3VCT- ND CRCW12062K20FKEA RF - 35 Manufacturer ATC ATC ATC ATC ATC ATC Kemet Illinois Capacitor ATC ATC ATC ATC ATC Murata Multicomp Vishay Panasonic Vishay Taconic
MRF8S9220HR3 MRF8S9220HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, Pout = 65 W (Avg.) IDQ = 1600 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth D Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF Gps D, DRAIN EFFICIENCY (%) 20 19.6 19.2 Gps, POWER GAIN (dB) 18.8 18.4 18 17.6 17.2 16.8 16.4 PARC ACPR 840 860 880 900 920 940 960 IRL 42 40 38 36 34 32 ACPR (dBc) -31 -33 -35 -37 -39 980 0 -5 -10 -15 -20 -25 IRL, INPUT RETURN LOSS (dB) -1.5 -2 -2.5 -3 -3.5 -4 PARC (dB)
16 820
f, FREQUENCY (MHz)
Figure 2. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 65 Watts Avg.
0 -10 -20 IM3-U -30 -40 -50 -60 1 10 TWO-TONE SPACING (MHz) 100 IM5-U IM5-L IM3-L VDD = 28 Vdc, Pout = 200 W (PEP), IDQ = 1600 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz
IMD, INTERMODULATION DISTORTION (dBc)
IM7-U IM7-L
Figure 3. Intermodulation Distortion Products versus Two - Tone Spacing
20.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 20 Gps, POWER GAIN (dB) 19.5 19 18.5 18 17.5 1 ACPR D -1 -1 dB = 59.8 W -2 -3 -4 -5 30 -2 dB = 81.0 W -3 dB = 110.1 W VDD = 28 Vdc, IDQ = 1600 mA, f = 940 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 50 70 90 110 Gps PARC 40 30 20 10 0 130 D, DRAIN EFFICIENCY (%) 0 50 -30 -35 -40 -45 -50 -55 ACPR (dBc) 60 -25
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
MRF8S9220HR3 MRF8S9220HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
21 920 MHz 20 Gps, POWER GAIN (dB) 19 18 17 16 15 1 920 MHz 10 Gps 940 MHz 960 MHz VDD = 28 Vdc, IDQ = 1600 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 960 MHz 940 MHz D 920 MHz 60 50 D, DRAIN EFFICIENCY (%) 40 30 ACPR 940 MHz 960 MHz 100 20 10 0 300 0 -10 -20 -30 -40 -50 -60 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 1.8 3.6
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single - Carrier W - CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
25 20 15 GAIN (dB) IRL 10 5 0 -5 600 VDD = 28 Vdc Pin = 0 dBm IDQ = 1600 mA 700 800 900 1000 1100 1200 -10 -15 -20 -25 1300 Gain 5 0 -5 IRL (dB) 3.84 MHz Channel BW 0
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 1 2 3 4 5 6 7 8 9 10 10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -9 -7.2 -5.4 -3.6 -1.8 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW
PEAK-TO-AVERAGE (dB)
Figure 7. CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal
Figure 8. Single - Carrier W - CDMA Spectrum MRF8S9220HR3 MRF8S9220HSR3 6 RF Device Data Freescale Semiconductor
VDD = 28 Vdc, IDQ = 1600 mA, Pout = 65 W Avg. f MHz 820 840 860 880 900 920 940 960 980 Zsource W 1.27 - j1.44 1.27 - j1.15 1.23 - j0.90 1.05 - j0.68 0.95 - j0.39 0.94 - j0.15 0.90 + j0.08 0.85 + j0.31 0.78 + j0.55 Zload W 2.14 - j2.23 1.97 - j1.94 1.82 - j1.65 1.54 - j1.40 1.29 - j1.11 1.26 - j0.85 1.22 - j0.69 1.11 - j0.47 1.01 - j0.23
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S9220HR3 MRF8S9220HSR3 RF Device Data Freescale Semiconductor 7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1600 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle 60 59 Pout, OUTPUT POWER (dBm) 58 57 56 55 54 53 52 51 50 49 29 30 31 32 33 34 35 36 37 38 39 40 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 920 940 960 P1dB Watts 295 270 284 dBm 54.7 54.3 54.5 357 316 344 P3dB Watts dBm 55.5 55.0 55.4 960 MHz 940 MHz 940 MHz 920 MHz 960 MHz 920 MHz Actual Ideal
Test Impedances per Compression Level f (MHz) 920 940 960 P1dB P1dB P1dB Zsource 0.630 - j1.26 0.728 - j1.43 0.886 - j1.68 Zload 0.791 - j1.16 0.809 - j1.04 0.853 - j1.28
Figure 10. Pulsed CW Output Power versus Input Power @ 28 V
MRF8S9220HR3 MRF8S9220HSR3 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8S9220HR3 MRF8S9220HSR3 RF Device Data Freescale Semiconductor 9
MRF8S9220HR3 MRF8S9220HSR3 10 RF Device Data Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3 RF Device Data Freescale Semiconductor 11
MRF8S9220HR3 MRF8S9220HSR3 12 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Nov. 2009 * Initial Release of Data Sheet Description
MRF8S9220HR3 MRF8S9220HSR3 RF Device Data Freescale Semiconductor 13
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MRF8S9220HR3 MRF8S9220HSR3
Rev. 14 0, 11/2009 Document Number: MRF8S9220H
RF Device Data Freescale Semiconductor

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